BTS7700G中文资料英飞凌数据手册PDF规格书

Description

The BTS 7700 G is part of the TrilithIC family containing three dies in one package:

One double high-side switch and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated leadframes. The sources are connected to individual pins, so the BTS 7700 G can be used in H-bridge- as well as in any other configuration. The double high-side is manufactured in SMART SIPMOS® technology which combines low RDS ON vertical DMOS power stages with CMOS control circuitry. The high-side switch is fully protected and contains the control and diagnosis circuitry. To achieve low RDS ON and fast switching performance, the low-side switches are manufactured in S-FET logic level technology. The equivalent standard product is the BUZ 104 SL.

In contrast to the BTS 7710 G, which consists of lower ohmic chips in the same package, the BTS 7700 G offers a lower price for applications, which do not need the high current capability of the BTS 7710 G or BTS 7710 GP.

1.1 Features

• Quad D-MOS switch driver

• Free configurable as bridge or quad-switch

• Optimized for DC motor management applications

• Low RDS ON: 110 mτ high-side switch, 90 mτ low side switch (typical values @ 25°C)

• Maximum peak current: typ. 9 A @ 25°C

• Very low quiescent current: typ. 5 μA @ 25°C

• Small outline, enhanced power P-DSO-package

• Load and GND-short-circuit-protection

• Operates up to 40 V

• Status flag diagnosis

• Overtemperature shut down with hysteresis

• Internal clamp diodes

• Isolated sources for external current sensing

• Under-voltage detection with hysteresis

• PWM frequencies up to 50 kHz