NPN Epitaxial Planar Transistor

Description The BTD2195SN3 is designed for use in general purpose amplifier and low speed switching application. Pb-free lead plating package process is adopted.

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NPN Epitaxial Planar Transistor

Description The BTD2195T3 is designed for use in general purpose amplifier and low speed switching application. Pb-free lead plating package process is adopted.

文件：241.94 Kbytes 页数：6 Pages

CYSTEKEC

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Low Vcesat NPN Epitaxial Planar Transistor

Features • The BTD2444S3 is designed for general purpose low frequency power amplifier applications. • Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA • Pb-free package

文件：178.76 Kbytes 页数：5 Pages

CYSTEKEC

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High Voltage NPN Epitaxial Planar Transistor

High Voltage NPN Epitaxial Planar Transistor Built-in Base Resistor Description • High breakdown voltage. (BVCEO=400V) • Low saturation voltage, typical VCE(sat) =0.13V at Ic/IB =20mA/1mA. • Complementary to BTB1498N3 • Pb-free package

文件：272.89 Kbytes 页数：6 Pages

CYSTEKEC

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丝印：BTD25350MEB；Package：SOW-18；Dual-Channel Isolated Gate Driver

Features • Isolation voltage up to 5000Vrms • Peak output current up to 10A • Propagation delay 60ns • Maximum switching frequency 1MHz • Primary-side supply 3~5V • Secondary-side supply up to 33V • Primary-side and secondary-side power supply undervoltage lockout (UVLO) • Compatible with

文件：749.19 Kbytes 页数：19 Pages

BASICSEMI

基本半导体

丝印：BTD25350MEC；Package：SOW-18；Dual-Channel Isolated Gate Driver

Features • Isolation voltage up to 5000Vrms • Peak output current up to 10A • Propagation delay 60ns • Maximum switching frequency 1MHz • Primary-side supply 3~5V • Secondary-side supply up to 33V • Primary-side and secondary-side power supply undervoltage lockout (UVLO) • Compatible with

文件：749.19 Kbytes 页数：19 Pages

BASICSEMI

基本半导体

丝印：BTD25350MMB；Package：SOW-18；Dual-Channel Isolated Gate Driver

Features • Isolation voltage up to 5000Vrms • Peak output current up to 10A • Propagation delay 60ns • Maximum switching frequency 1MHz • Primary-side supply 3~5V • Secondary-side supply up to 33V • Primary-side and secondary-side power supply undervoltage lockout (UVLO) • Compatible with

文件：749.19 Kbytes 页数：19 Pages

BASICSEMI

基本半导体

丝印：BTD25350MMC；Package：SOW-18；Dual-Channel Isolated Gate Driver

Features • Isolation voltage up to 5000Vrms • Peak output current up to 10A • Propagation delay 60ns • Maximum switching frequency 1MHz • Primary-side supply 3~5V • Secondary-side supply up to 33V • Primary-side and secondary-side power supply undervoltage lockout (UVLO) • Compatible with

文件：749.19 Kbytes 页数：19 Pages

BASICSEMI

基本半导体

丝印：BTD25350MSB；Package：SOW-18；Dual-Channel Isolated Gate Driver

Features • Isolation voltage up to 5000Vrms • Peak output current up to 10A • Propagation delay 60ns • Maximum switching frequency 1MHz • Primary-side supply 3~5V • Secondary-side supply up to 33V • Primary-side and secondary-side power supply undervoltage lockout (UVLO) • Compatible with

文件：749.19 Kbytes 页数：19 Pages

BASICSEMI

基本半导体

丝印：BTD25350MSB；Package：SOW-18；Dual-Channel Isolated Gate Driver

Features • Isolation voltage up to 5000Vrms • Peak output current up to 10A • Propagation delay 60ns • Maximum switching frequency 1MHz • Primary-side supply 3~5V • Secondary-side supply up to 33V • Primary-side and secondary-side power supply undervoltage lockout (UVLO) • Compatible with

文件：749.19 Kbytes 页数：19 Pages

BASICSEMI

基本半导体