Dual-Channel Isolated Gate Driver

Features • Isolation voltage up to 5000Vrms • Peak output current up to 10A • Propagation delay 60ns • Maximum switching frequency 1MHz • Primary-side supply 3~5V • Secondary-side supply up to 33V • Primary-side and secondary-side power supply undervoltage lockout (UVLO) • Compatible with

文件：749.19 Kbytes 页数：19 Pages

BASICSEMI

基本半导体

High Voltage NPN Epitaxial Planar Transistor

Features • High BVCEO, 400V minimum

文件：156.44 Kbytes 页数：4 Pages

CYSTEKEC

全宇昕科技

Low Vcesat NPN Epitaxial Planar Transistor

Features  High BVCEO  Complementary to BTA1727M3  Pb-free lead plating package

文件：429 Kbytes 页数：8 Pages

CYSTEKEC

全宇昕科技

Low Vcesat NPN Epitaxial Planar Transistor

Features  High BVCEO  Complementary to BTA1727M3  Pb-free lead plating package

文件：429 Kbytes 页数：8 Pages

CYSTEKEC

全宇昕科技

丝印：BTD3011；Package：SOW-16；Single-Channel Isolated Gate Driver

Features • Isolation voltage up to 5000Vrms • Peak output current up to ±15A • CMTI=150kV/μs Minimum • Maximum switching frequency 75kHz • Secondary-side supply up to 28V • Primary-side and secondary-side power supply undervoltage lockout (UVLO) • Compatible with 3.3V, 5V input • Short ci

文件：679.67 Kbytes 页数：15 Pages

BASICSEMI

基本半导体

Single-Channel Isolated Gate Driver

Features • Isolation voltage up to 5000Vrms • Peak output current up to ±15A • CMTI=150kV/μs Minimum • Maximum switching frequency 75kHz • Secondary-side supply up to 28V • Primary-side and secondary-side power supply undervoltage lockout (UVLO) • Compatible with 3.3V, 5V input • Short ci

文件：679.67 Kbytes 页数：15 Pages

BASICSEMI

基本半导体

Bidirectional Diode

Features • Small size and light weight. • DHD type package.

文件：51.58 Kbytes 页数：2 Pages

SANYO

三洋

Low Vcesat NPN Epitaxial Planar Transistor

Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features • Very low collector-to-emitter saturation voltage • Fast switching speed • High

文件：273.18 Kbytes 页数：8 Pages

CYSTEKEC

全宇昕科技

Bidirectional Diode

Features • Small size and light weight. • DHD type package.

文件：51.58 Kbytes 页数：2 Pages

SANYO

三洋

General Purpose NPN Epitaxial Planar Transistor

Features • Low collector saturation voltage • High breakdown voltage, VCEO=80V (min.) • High collector current, IC(max)=1A (DC) • Pb-free lead plating package

文件：283.2 Kbytes 页数：7 Pages

CYSTEKEC

全宇昕科技