BST70T2P4K01-VC

Automotive Grade SiC Power Module

Features ·HSDIP20package withthe4thGenerationSiC-MOSFET ·VDSS=1200V ·LowRDS(on) ·High-speedswitchingpossible ·Lowswitchinglosses ·Tvjmax=175°C ·Compactdesign ·Withhighthermalconductivityisolation ·IntegratedNTCtemperaturesensor ·4.2kVAC1sinsulation

BST72A

N-channel vertical D-MOS transistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Features ■TrenchMOS™technology ■Veryfastswitching ■Logiclevelcompatible. Applications ■Relaydriver ■Highspeedlinedriver ■Logicleveltranslator.

BST74A

N-channel vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinTO-92variantenvelopeanddesignedforuseaslinecurrentinterrupterintelephonesetsandforapplicationinrelay,high-speedandline-transformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswit

BST76

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT54(TO-92)variantpackage. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching •Nosecondarybreakdown. APPLICATIONS •Linecurrentinterrupterintelephonesets •Relay,high-speedandlinetrans

BST76A

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT54(TO-92)variantpackage. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching •Nosecondarybreakdown. APPLICATIONS •Linecurrentinterrupterintelephonesets •Relay,high-speedandlinetrans

BST80

Marking：KM；Package：SOT-89；N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT89package. FEATURES •Lowdrain-sourceon-stateresistance •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching •Nosecondarybreakdown. APPLICATIONS •Thinandthickfilmcircuits •Relay,high-speedand

BST82

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinSOT23envelopeanddesignedforuseasSurfaceMountedDevice(SMD)inthinandthick-filmcircuitsfortelephoneringerandforapplicationwithrelay,high-speedandline-transformerdrivers. FEATURES •DirectinterfacetoC-

BST82

Marking：O2；Package：SOT-23；SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

BST82

N-channel enhancement mode field-effect transistor

1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™1technology. Productavailability: BST82inSOT23. 2.Features nTrenchMOS™technology nVeryfastswitching nLogiclevelcompatible nSubminiaturesurfacemountpackage. 3.Applicati

BST84

Marking：KN；Package：SOT-89；N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelverticalD-MOStransistorinSOT89envelopeanddesignedforuseaslinecurrentinterrupterintelephonesetsandforapplicationinrelay,high-speedandline-transformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching •Nosecondbreakd