N-channel vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed swit

文件：63.98 Kbytes 页数：12 Pages

PHI

PHI

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT54 (TO-92) variant package. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interrupter in telephone sets • Relay, high-speed and line trans

文件：78.27 Kbytes 页数：12 Pages

PHI

PHI

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT54 (TO-92) variant package. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interrupter in telephone sets • Relay, high-speed and line trans

文件：78.27 Kbytes 页数：12 Pages

PHI

PHI

丝印：KM；Package：SOT-89；N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT89 package. FEATURES • Low drain-source on-state resistance • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Thin and thick film circuits • Relay, high-speed and

文件：74.9 Kbytes 页数：12 Pages

PHI

PHI

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-film circuits for telephone ringer and for application with relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-

文件：74.39 Kbytes 页数：12 Pages

PHI

PHI

丝印：O2；Package：SOT-23；SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

文件：30.32 Kbytes 页数：1 Pages

ZETEX

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BST82 in SOT23. 2. Features n TrenchMOS™ technology n Very fast switching n Logic level compatible n Subminiature surface mount package. 3. Applicati

文件：372.21 Kbytes 页数：14 Pages

NEXPERIA

安世

N-Channel Enhancement Mode MOSFET

Features ® Low on-resistance ® High-speed switching ® Drive circuits can be simple ® Parallel use is easy

文件：6.27282 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：KN；Package：SOT-89；N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel vertical D-MOS transistor in SOT89 envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No second breakd

文件：72.38 Kbytes 页数：12 Pages

PHI

PHI

丝印：K0；Package：SOT-89；N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-film circuits for application with relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc.

文件：62.39 Kbytes 页数：12 Pages

PHI

PHI