丝印：K0；Package：SOT-89；N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-film circuits for application with relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc.

文件：62.39 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：K0；Package：6LdUTDFN；500mA 2.4MHz Low IQ High Efficiency Synchronous Buck Converter

文件：689.7 Kbytes 页数：14 Pages

RENESAS

瑞萨

丝印：K033V120X2；Package：TO-247-3L；1200 V αSiC Silicon Carbide Power MOSFET

Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS(ON) • Fast switching with low RG and low capacitance • Optimized gate drive voltage (VGS =15V) • Low reverse recovery diode (Qrr) Applications Renewable • EV Charger • Solar Inverters Industrial • UPS • SMPS

文件：829.65 Kbytes 页数：9 Pages

AOSMD

万国半导体

丝印：K033V120X2Q；Package：TO-247-3L；1200 V αSiC Silicon Carbide Power MOSFET

Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS, ON • Fast switching with low RG and low capacitance • Optimized gate drive voltage (VGS = 15 V) • Low reverse recovery diode (Qrr) • AEC-Q101 Automotive Qualified Applications • xEV Charger • Electric Vehicle Supply

文件：833.22 Kbytes 页数：9 Pages

AOSMD

万国半导体

丝印：K065V65X2；Package：TO-247-3L；650V αSiC Silicon Carbide Power MOSFET

Features • Proprietary αSiC MOSFET technology • Low loss, fast switching speeds with low RG • Optimized drive voltage (VGS =15V) for broad driver compatibility • Robust body diode and low Qrr Applications • Renewable • Industrial • EV Charger • UPS • Solar Inverters

文件：880.04 Kbytes 页数：9 Pages

AOSMD

万国半导体

丝印：K03H1202；Package：PG-TO-220-3-31；HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel s

文件：335.5 Kbytes 页数：14 Pages

Infineon

英飞凌

丝印：K06T60；Package：PG-TO220-3；IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Features  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V

文件：519.94 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：K09S；Package：SMA；Sidac

Features Excellent capability of absorbing transient surge Quick response to surge voltage (ns Level) Glass passivated junctions High voltage lcmp ignitors

文件：2.96257 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：K09S；Package：DO-214AA；Sidac

Features Excellent capability of absorbing transient surge Quick response to surge voltage (ns Level) Glass passivated junctions High voltage lcmp ignitors

文件：2.8523 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：K09S；Package：SOD-123FL；Sidac

Features Excellent capability of absorbing transient surge Quick response to surge voltage (ns Level) Glass passivated junctions High voltage lcmp ignitors

文件：2.80869 Mbytes 页数：5 Pages

UNSEMI

优恩半导体