LM2904WYPT

Marking：K04WY；Package：TSSOP8；Low-power dual operational amplifier

Description Thiscircuitconsistsoftwoindependent,highgainoperationalamplifiers(opamps) thathavefrequencycompensationimplementedinternally.Theyaredesigned specificallyforautomotiveandindustrialcontrolsystems.Thecircuitoperatesfrom asinglepowersupplyoverawidera

LMK05318BTRGZRQ1

Marking：K05318BQ1；Package：VQFN；LMK05318B-Q1 Ultra-Low Jitter Network Synchronizer and Clock Generator With BAW VCO for Automotive and Industrial Applications

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade2:–40°Cto105°C •Ultra-lowjitterBAWVCObasedEthernetclocks –50fstypicalRMSjitterat312.5MHz –60fstypicalRMSjitterat156.25MHz •Onehigh-performanceDigitalPhase-LockedLoop (DPLL)pairedwith

LMK05318BTRGZTQ1

Marking：K05318BQ1；Package：VQFN；LMK05318B-Q1 Ultra-Low Jitter Network Synchronizer and Clock Generator With BAW VCO for Automotive and Industrial Applications

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade2:–40°Cto105°C •Ultra-lowjitterBAWVCObasedEthernetclocks –50fstypicalRMSjitterat312.5MHz –60fstypicalRMSjitterat156.25MHz •Onehigh-performanceDigitalPhase-LockedLoop (DPLL)pairedwith

QS5K2

Marking：K02；Package：SOT-25；2.5V Drive NchNch MOS FET

■MOSFETs ●SmallSignalMOSFETSeries ●MiddlePowerMOSFETSeries ●PowerMOSFETSeries ■SelectorGuideforAutomotiveMOSFETs(AEC-Q101) ■BipolarTransistors(Surfacemounttype) ■TransistorArray ■ComplexBipolarTransistors ■DigitalTransistors ■ComplexDigitalTransis

QS6K1

Marking：K01；Package：SOT-26；Switching (30V, 1.0A)

■MOSFETs ●SmallSignalMOSFETSeries ●MiddlePowerMOSFETSeries ●PowerMOSFETSeries ■SelectorGuideforAutomotiveMOSFETs(AEC-Q101) ■BipolarTransistors(Surfacemounttype) ■TransistorArray ■ComplexBipolarTransistors ■DigitalTransistors ■ComplexDigitalTransis

RJK0389DPA

Marking：K0389；Package：WPAK-8；Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Features •Lowon-resistance •Capableof4.5Vgatedrive •Highdensitymounting •Pb-free •Halogen-free

TK024N60Z1

Marking：K024N60Z1；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.02Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=3.84mA)

TK040N60Z1

Marking：K040N60Z1；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.033Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=2.4mA)

TK040N65Z

Marking：K040N65Z；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.033Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=2.85mA)

TK040Z65Z

Marking：K040Z65Z；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.033Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=2.85mA)