N-channel vertical D-MOS transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible. Applications ■ Relay driver ■ High speed line driver ■ Logic level translator.

文件：75.09 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel enhancement mode field-effect transistor

文件：290.23 Kbytes 页数：13 Pages

恩XP

N-channel TrenchMOS intermediate level FET

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

BYD/比亚迪
DIP

BYD/比亚迪

上传：佛山市芯光达科技有限公司

Infineon
PG-TSDSON-8

Infineon

英飞凌

上传：深圳市威尔健半导体有限公司