DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast

文件：58.79 Kbytes 页数：1 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Available in Lead Free/RoHS Compliant Version (Note 4) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 5 and 6)

文件：115.47 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：K38；Package：SOT-363；Dual N-Channel 60 V (D-S) MOSFET

•Low On-Resistance:1.5 FEATURES • Halogen-free According to IEC 61249-2-21 Definition Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：2.25313 Mbytes 页数：6 Pages

DGNJDZ

南晶电子

丝印：K38；Package：SOT-363；Dual N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition •Low On-Resistance:2.5 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：2.25228 Mbytes 页数：6 Pages

DGNJDZ

南晶电子

丝印：SS；Package：SOT-363；Dual N-Channel MOSFET

Feature  High density cell design for extremely low RDS(on)  Rugged and Relaible Application  Direct Logic-Level Interface: TTL/CMOS  Battery Operated Systems  Solid-State Relays

文件：513.65 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Available in Lead Free/RoHS Compliant Version (Note 4) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 5 and 6)

文件：115.47 Kbytes 页数：5 Pages

DIODES

美台半导体

Dual N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition •Low On-Resistance:2.5 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：2.25228 Mbytes 页数：6 Pages

DGNJDZ

南晶电子

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Available in Lead Free/RoHS Compliant Version (Note 4) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 5 and 6)

文件：115.47 Kbytes 页数：5 Pages

DIODES

美台半导体

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control

文件：707.2 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：38D；Package：SOT363；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control

文件：707.2 Kbytes 页数：7 Pages

DIODES

美台半导体