N沟道 MOSFET

NCEPower

新洁能

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

Infineon

英飞凌

N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes

美台半导体

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：N-CHANNEL ENHANCEMENT MODE MOSFE

ANBON SEMICONDUCTOR (INT'L) LIMITED

丝印：A76；Package：SOT-23；100V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON) , VGS@10V, ID@170mA

文件：320.98 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：A76；Package：SOT-23；100V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON) , VGS@10V, ID@170mA

文件：320.98 Kbytes 页数：6 Pages

PANJIT

強茂

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Inp

文件：67.49 Kbytes 页数：3 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching perform

文件：67.74 Kbytes 页数：3 Pages

DIODES

美台半导体

N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：1.73104 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode MOSFET

Features • ESD protected gate • Easily designed drive circuits • High speed switching • Low-voltage drive • Pb-free lead plating and halogen-free package • Easy to use in parallel

文件：447.77 Kbytes 页数：9 Pages

CYSTEKEC

全宇昕科技