P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching

文件：285.09 Kbytes 页数：10 Pages

Fairchild

仙童半导体

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package. FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High speed switching • No secondary breakdown. APPLICATIONS • Intended for use as a Line current interruptor in telepho

文件：76.96 Kbytes 页数：9 Pages

PHI

飞利浦

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V

文件：80.51 Kbytes 页数：7 Pages

SIEMENS

西门子

SIPMOS® Small-Signal Transistor

SIPMOS ® Small-Signal Transistor• P channel\n• Enhancement mode\n• Logic Level\n• VGS(th) = -0.8...-2.0 V

Infineon

英飞凌

P-Channel Enhancement Mode Field Effect Transistor

General Description\nThese P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. ■ BSS84: -0.13A, -50V. RDS(ON) = 10W @ VGS = -5V.\n   BSS110: -0.17A, -50V. RDS(ON) = 10W @ VGS = -10V\n■ Voltage controlled p-channel small signal switch.\n■ High density cell design for low RDS(ON) .\n■ High saturation current.;

ONSEMI

安森美半导体