BSS110数据手册ONSEMI中文资料规格书
BSS110规格书详情
描述 Description
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.17A DC and can deliver pulsed currents up to 0.68A. This product is particularly suited to low voltage applications requiring a low current high side switch.
特性 Features
■ BSS84: -0.13A, -50V. RDS(ON) = 10W @ VGS = -5V.
BSS110: -0.17A, -50V. RDS(ON) = 10W @ VGS = -10V
■ Voltage controlled p-channel small signal switch.
■ High density cell design for low RDS(ON) .
■ High saturation current.
技术参数
- 型号：
BSS110
- 功能描述：
MOSFET DISC BY MFG 2/02
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SIEMENS/西门子 |
25+ |
TO-92 |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
SIEMENS |
24+ |
原厂封装 |
2963 |
原装现货假一罚十 |
询价 | ||
西门子 |
24+ |
NA/ |
100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
西门子 |
25+ |
TO-92 |
30 |
原装正品,假一罚十! |
询价 | ||
Infineon |
20+ |
SOT-23 |
43000 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
INFINEON |
0725+ |
SOT23 |
6000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
N/A |
24+ |
564 |
大批量供应优势库存热卖 |
询价 | |||
FSC |
24+ |
TO-92 |
6000 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 | ||
N/A |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
询价 | ||
SIEMENS |
2020+ |
TO-92 |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |
