P-channel enhancement mode vertical D-MOS transistor

FEATURES · Low RDS(on) · Direct interface to C-MOS, TTL, etc. · High-speed switching · No secondary breakdown. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers.

文件：184.31 Kbytes 页数：13 Pages

NEXPERIA

安世

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers. FEATURES • Low RDS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

文件：76.53 Kbytes 页数：12 Pages

PHI

PHI

SIPMOS Small-Signal Transistor

• N channel • Enhancement mode • Avalanche rated •VGS(th) = 2.1 ... 4.0 V

文件：101.77 Kbytes 页数：8 Pages

SIEMENS

西门子

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope, intended for use in relay, high-speed and line transformer drivers. FEATURES • Low RDS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

文件：76.74 Kbytes 页数：12 Pages

PHI

PHI

P-channel enhancement mode vertical D-MOS transistor

FEATURES · Low RDS(on) · Direct interface to C-MOS, TTL, etc. · High-speed switching · No secondary breakdown. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope, intended for use in relay, high-speed and line transformer drivers.

文件：184.47 Kbytes 页数：13 Pages

NEXPERIA

安世

P-channel vertical D-MOS intermediate level FET

P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D-MOSFET) in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device (SMD) plastic package.

Nexperia

安世

P-channel enhancement mode vertical D-MOS transistor

恩XP

SIPMOS Small-Signal Transistor

Infineon

英飞凌