BRF2N60规格书批发供应蓝箭电子FOSHAN-114ic电子网

首页 >BRF2N60>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
BRF2N60	文件：1.27381 Mbytes Page：6 Pages	N-CHANNEL MOSFET in a TO-220F Plastic Package 文件：1.27381 Mbytes 页数：6 Pages	FOSHAN 蓝箭电子	FOSHAN
MTB2N60E	文件：271.17 Kbytes Page：10 Pages	TMOS POWER FET 2.0 AMPERES 600 VOLTS 文件：271.17 Kbytes 页数：10 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MTP2N60	文件：219.5 Kbytes Page：8 Pages	TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h 文件：219.5 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MTP2N60E	文件：219.5 Kbytes Page：8 Pages	TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h 文件：219.5 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA

更多BRF2N60供应商更新时间2026-4-18 9:01:00