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FQD1N60C

N-ChannelQFET짰MOSFET600V,1.0A,11.5廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD1N60C

N-ChannelQFET짰MOSFET600V,1.0A,11.5廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD1N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance

KERSEMI

Kersemi Electronic Co., Ltd.

FQD1N60C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQD1N60CTM

N-ChannelQFET짰MOSFET600V,1.0A,11.5廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD1N60TM

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI1N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQN1N60C

600VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP1N60

QFETN-CHANNEL

FEATURES •AdvancedNewDesign •AvalancheRuggedTechnology •RuggedGateOxideTechnology •VeryLowIntrinsicCapacitances •ExcellentSwitchingCharacteristics •UnrivalledGateCharge:5.0nC(Typ.) •ExtendedSafeOperatingArea •LowerRDS(ON):9.3Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP1N60

600VN-ChannelMOSFET

DESCRIPTION TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy

TGS

Tiger Electronic Co.,Ltd

详细参数

  • 型号:

    BLV1N60A

  • 制造商:

    ESTEK

  • 制造商全称:

    ESTEK

  • 功能描述:

    N-channel Enhancement Mode Power MOSFET

供应商型号品牌批号封装库存备注价格
ESTEK
23+
NA
39960
只做进口原装,终端工厂免费送样
询价
BELING/上海贝岭
24+
TO92
15000
原装正品原厂发货
询价
KX-SLS
23+
SMD DIP
800001064
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
上海贝岭
23+24
TO-92
16790
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC
询价
MOT
24+
580
询价
PHI
23+
TO-59
220
专营高频管模块,全新原装!
询价
ASI
16+
NA
8800
原装现货,货真价优
询价
MOTOROLA/摩托罗拉
23+
TO-59r
1200
全新原装现货,价格优势
询价
PHI
23+
TO-59
8510
原装正品代理渠道价格优势
询价
PHI
22+
高频管
350
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
更多BLV1N60A供应商 更新时间2025-7-24 17:41:00