600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：545.42 Kbytes 页数：9 Pages

FAIRCHILD

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600V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：677.13 Kbytes 页数：8 Pages

FAIRCHILD

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QFET N-CHANNEL

FEATURES • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON): 9.3Ω (Typ.)

文件：519.409 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：65.34 Kbytes 页数：1 Pages

TGS