BLS9G2729L-350数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

350 W LDMOS power transistor for S-band applications in the frequency range from 2.7 GHz to 2.9 GHz.

特性 Features

• High efficiency
• Excellent ruggedness
• Designed for S-band operations
• Excellent thermal stability
• Easy power control
• Integrated dual sided ESD protection enables excellent off-state isolation
• High flexibility with respect to pulse formats
• Internally matched for ease of use
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

应用 Application

• S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz

简介

BLS9G2729L-350属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLS9G2729L-350晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。