BLS6G3135S-120数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

特性 Features

Easy power control
Integrated ESD protection
Internally matched for ease of use
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (3.1 GHz to 3.5 GHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

应用 Application

Radar applications in the 3.1 GHz to 3.5 GHz frequency range
S-Band power amplifiers

简介

BLS6G3135S-120属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLS6G3135S-120晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。