LDMOS S-band radar power transistor

General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Features and benefits ■ Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 : ◆ Outpu

文件：78.02 Kbytes 页数：11 Pages

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RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

LDMOS S-Band radar power transistor

General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Features ■ Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 : ◆ Output power

文件：68.11 Kbytes 页数：11 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

LDMOS S-Band radar power transistor

General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Features and benefits ■ Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 μs and a δ of 10 : ◆ Output

文件：255.2 Kbytes 页数：12 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

LDMOS S-Band radar power transistor

General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Features ■ Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 : ◆ Output power

文件：68.11 Kbytes 页数：11 Pages

恩XP

LDMOS S-Band radar power transistor

General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Features and benefits ■ Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 μs and a δ of 10 : ◆ Output

文件：255.2 Kbytes 页数：12 Pages

恩XP