LDMOS S-Band radar power transistor

文件：84.41 Kbytes 页数：12 Pages

恩XP

LDMOS S-Band radar power transistor

文件：84.41 Kbytes 页数：12 Pages

PHI

PHI

LDMOS S-Band radar power transistor

文件：255.34 Kbytes 页数：13 Pages

PHI

PHI

LDMOS S-Band radar power transistor

文件：84.41 Kbytes 页数：12 Pages

恩XP

60R360,hv,高压,sj,超结

BLS60R360, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. • Fast Switching\n• 100% avalanche tested\n• Improved dv/dt capability\n• RoHS product;

Belling

上海贝岭

N-channel Enhanced MOSFETs

BLS60R380F, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose appl • Fast Switching\n• 100% avalanche tested\n• Improved dv/dt capability\n• RoHS product\n•;

Belling

上海贝岭

N-channel Enhanced MOSFETs

BLS60R520, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose appl • Fast Switching\n• Improved dv/dt capability\n• RoHS product\n;

Belling

上海贝岭

Package：SOT-975C；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 60V 15DB SOT975C

Ampleon USA Inc.

Package：SOM038；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 32V SOM038

Ampleon USA Inc.

Package：SOT-502B；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 60V 13.5DB SOT502B

Ampleon USA Inc.