LDMOS S-Band radar power transistor

General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Features and benefits ■ Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 μs and a δ of 10 : ◆ Output

文件：255.2 Kbytes 页数：12 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

LDMOS S-Band radar power transistor

20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Excellent ruggedness\nIntegrated ESD protection\nExcellent thermal stability\nInternally matched for ease of use\nHigh efficiency\nDesigned for broadband operation (3.1 GHz to 3.5 GHz)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances;

Ampleon

安谱隆

LDMOS S-Band radar power transistor

文件：255.34 Kbytes 页数：13 Pages

PHI

飞利浦

Package：SOT-608A；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 60V 15.5DB SOT608A

Ampleon USA Inc.