丝印：BLQ；Package：SOT-89；Medium Power Transistor (-60V, -2A)

Features 1) Low saturation voltage , typically VCE (sat)= −0.15V at IC/ IB= −1A / −50mA. 2) Collector-emitter voltage = −60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SD2391.

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ROHM

罗姆

丝印：BLQ；Package：SOT-89；Medium Power Transistor (−60V, −2A)

文件：175.55 Kbytes 页数：3 Pages

ROHM

罗姆

金属-氧化物半导体场效应晶体管(MOSFET)

BLQC16N120 is an N-channel enhancement type planar MOSFET, with the revolutionary semiconductor material - silicon carbide, which has the advantages of low on-resistance, low capacitance and gate charge, and superior switching performance. The device can provide higher efficiency, faster operation f • \n;

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金属-氧化物半导体场效应晶体管(MOSFET)

BLQC40N120 is an N-channel enhancement type planar MOSFET, with the revolutionary semiconductor material - silicon carbide, which has the advantages of low on-resistance, low capacitance and gate charge, and superior switching performance. The device can provide higher efficiency, faster operation f • ;

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绝缘栅双极晶体管（IGBTs）

BLQG200T120 • ;

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