Power LDMOS transistor

General description A 750 W LDMOS power transistor for industrial applications at frequency of 915 MHz. The BLF0910H9LS750P is designed for high-power CW applications and is assembled in a high performance ceramic package. Features and benefits  High efficiency  Easy power control  Excel

文件：1.62474 Mbytes 页数：14 Pages

AMPLEON

安谱隆

Axial Lead and Cartridge Fuses

Axial Lead and Cartridge Fuses Laminated Body Fast-Acting Type BLF Series Fibre Body Fast-Acting Type BLN Series

文件：177.29 Kbytes 页数：1 Pages

LITTELFUSE

力特

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting b

文件：52.67 Kbytes 页数：8 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

文件：43.16 Kbytes 页数：8 Pages

PHI

PHI

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT541A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

文件：44.91 Kbytes 页数：8 Pages

PHI

PHI

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

文件：45.27 Kbytes 页数：8 Pages

PHI

PHI

Base station LDMOS transistor

DESCRIPTION 125 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. FEATURES • Typical performance at a supply voltage of 27 V: – 1-tone CW; IDQ = 1000 mA – Output power = 125 W – Gain = 16.5 dB – Efficiency = 54 – EDGE outpu

文件：110.73 Kbytes 页数：12 Pages

PHI

PHI

Power LDMOS transistor

General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Excellent ruggedness (VSWR  40 : 1 through all phase

文件：1.51826 Mbytes 页数：18 Pages

AMPLEON

安谱隆