BLF1049中文资料飞利浦数据手册PDF规格书

DESCRIPTION

125 W LDMOS power transistor for base station

applications at frequencies from 800 MHz to 1000 MHz.

FEATURES

• Typical performance at a supply voltage of 27 V:

– 1-tone CW; IDQ = 1000 mA

– Output power = 125 W

– Gain = 16.5 dB

– Efficiency = 54

– EDGE output power = 45 W (AV)

– ACPR400 = −64 dBc at 400 kHz

(EDGE; IDQ = 750 mA)

– EVM = 2 rms (AV)

(EDGE; IDQ = 750 mA)

• Easy power control

• Excellent ruggedness

• High power gain

• Excellent thermal stability

• Designed for broadband operation (800 to 1000 MHz)

• Internally matched for ease of use.

APPLICATIONS

• RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier applications in the 800 to 1000 MHz frequency range.