BLF10H6600P

Power LDMOS transistor

Generaldescription A600WLDMOSRFpowertransistorfortransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits Excellentruggedness(VSWR40:1throughallphase

BLF10H6600P

Power LDMOS transistor; • Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)\n• Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W\n• High power gain\n• High efficiency\n• Designed for broadband operation (400 MHz to 1000 MHz)\n• Internal input matching for high gain and optimum broadband operation\n• Excellent reliability\n• Easy power control\n• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)\n;

A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.\n\n

BLF10H6600PS

Power LDMOS transistor; • Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)\n• Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W\n• High power gain\n• High efficiency\n• Designed for broadband operation (400 MHz to 1000 MHz)\n• Internal input matching for high gain and optimum broadband operation\n• Excellent reliability\n• Easy power control\n• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)\n;

A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.\n\n

BLF10H6600PS

Power LDMOS transistor

Generaldescription A600WLDMOSRFpowertransistorfortransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits Excellentruggedness(VSWR40:1throughallphase

BLF10H6600P_15

Power LDMOS transistor

PHI

BLF10H6600PSU

Package：SOT-539B；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 110V 20.8DB SOT539B

BLF10H6600PU

Package：SOT-539A；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 110V 20.8DB SOT539A