首页 >BLF10H6600P>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BLF10H6600P | Power LDMOS transistor General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits Excellent ruggedness (VSWR 40 : 1 through all phase 文件:1.51826 Mbytes 页数:18 Pages | Ampleon 安谱隆 | Ampleon | |
Power LDMOS transistor General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits Excellent ruggedness (VSWR 40 : 1 through all phase 文件:1.51826 Mbytes 页数:18 Pages | Ampleon 安谱隆 | Ampleon | ||
Power LDMOS transistor 文件:460.5 Kbytes 页数:18 Pages | PHI 飞利浦 | PHI | ||
BLF10H6600P | Power LDMOS transistor A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. • Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)\n• Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W\n• High power gain\n• High efficiency\n• Designed for broadband operation (400 MHz to 1000 MHz)\n• Internal input matching for high gain and optimum broadband operation\n• Excel; | Ampleon 安谱隆 | Ampleon | |
Power LDMOS transistor A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. • Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)\n• Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W\n• High power gain\n• High efficiency\n• Designed for broadband operation (400 MHz to 1000 MHz)\n• Internal input matching for high gain and optimum broadband operation\n• Excel; | Ampleon 安谱隆 | Ampleon | ||
Package:SOT-539B;包装:托盘 类别:分立半导体产品 晶体管 - FET,MOSFET - 射频 描述:RF FET LDMOS 110V 20.8DB SOT539B | Ampleon USA Inc. | Ampleon USA Inc. | ||
Package:SOT-539A;包装:托盘 类别:分立半导体产品 晶体管 - FET,MOSFET - 射频 描述:RF FET LDMOS 110V 20.8DB SOT539A | Ampleon USA Inc. | Ampleon USA Inc. |
技术参数
- GP (dB):
20.8
- Die Technology:
LDMOS
- VDS (V):
50.0
- ηD (%):
46.0
- PL(1dB) (W):
600.0
- PL(1dB) (dBm):
57.8
- Test Signal:
2-Tone
- Fmin (MHz):
400
- Fmax (MHz):
1000
- Status:
Not for design in
- Matching:
I
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
23+ |
1688 |
房间现货库存:QQ:373621633 |
询价 | |||
恩XP |
18+ |
SMD |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
恩XP |
18+ |
SOT539A |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
询价 | ||
恩XP |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Ampleon |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Ampleon |
18+ |
SMD |
9 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
恩XP |
24+ |
NA/ |
3382 |
原装现货,当天可交货,原型号开票 |
询价 | ||
恩XP |
25+ |
SMD |
134 |
原装正品,假一罚十! |
询价 | ||
AMPLEON |
2450+ |
SOT539A |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
AMPLEON |
25+ |
SOT-539 |
26 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
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