N-channel Enhanced MOSFETs

BL50N30, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching • Fast switching\n• 100% avalanche tested\n• Improved dv/dt capability\n• RoHS product\n• ;

Belling

上海贝岭

300V, 50A PDP IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC

文件：568.74 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

300V, 50A PDP IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC

文件：568.74 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Avalanche Rated N-channel MOSFET

文件：123.35 Kbytes 页数：2 Pages

SSDI