BL2N60F规格书供应代理银河微电Galaxy-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
BL2N60F	文件：300 bytes Page：1 Pages	600V,2A,5Ω,N-Channel, Power MOSFET	Galaxy 银河微电	Galaxy
BL2N60I	文件：300 bytes Page：1 Pages	2A, 600V, 2.5W, N Channel,Power MOSFETs	Galaxy 银河微电	Galaxy
MTB2N60E	文件：271.17 Kbytes Page：10 Pages	TMOS POWER FET 2.0 AMPERES 600 VOLTS 文件：271.17 Kbytes 页数：10 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MTP2N60	文件：219.5 Kbytes Page：8 Pages	TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h 文件：219.5 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MTP2N60E	文件：219.5 Kbytes Page：8 Pages	TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h 文件：219.5 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA

更多BL2N60供应商更新时间2026-10-30 14:01:00