N-channel Enhanced MOSFETs

BL18N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. • Fast switching\n• 100% avalanche tested\n• Improved dv/dt capability\n• RoHS product;

Belling

上海贝岭

POWER FIELD EFFECT TRANSISTOR

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ETCList of Unclassifed Manufacturers

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N-Channel UniFETTM MOSFET 200 V, 16 A, 125 m廓

文件：1.16307 Mbytes 页数：8 Pages

Fairchild

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N-Channel 200 V (D-S) MOSFET

文件：1.01032 Mbytes 页数：7 Pages

VBSEMI

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