BGA751N7中文资料GPS / GLONASS / COMPASS LNA数据手册Infineon规格书

描述 Description

The BGA751L7 is a low current single-band low noise amplifier MMIC for UMTS bands V, VI and VIII. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profileTSNP-7-1 or TSNP-7-2 leadless green packages. Because the matching is off chip, the 800 MHz path can be easily converted into a 900 MHz path by optimizing the input and output matching network. This document specifies the electrical parameters, pinout, application circuit and packaging of the chip.

特性 Features

·Gain: 16 / -8 dB in high / low gain mode
·Noise figure: 1.05 dB in high gain mode
·Supply current: 3.3 / 0.5 mA in high / low gain mode
·Standby mode (< 2 μA typ.)
·Output internally matched to 50 Ω
·Inputs pre-matched to 50 Ω
·2kV HBM ESD protection
·Low external component count
·Small leadless TSNP-7-1 / TSNP-7-2 packages (2.0 x 1.3 x 0.39 mm)
·Pb-free (RoHS compliant) package

应用 Application

·LNA for LTE and 3G systems

简介

BGA751N7属于RF/IF射频/中频RFID的射频放大器。由制造生产的BGA751N7射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。