BFU910F中文资料NPN wideband silicon germanium RF transistor数据手册恩XP规格书

描述 Description

NPN silicon germanium RF transistor for high speed, low noise applications in a plastic,4-pin dual-emitter SOT343F package.
The BFU910F is suitable for small signal applications up to 20 GHz.

特性 Features

• Low noise high gain microwave transistor
• Minimum noise figure (NFmin) = 0.65 dB at 12 GHz
• Maximum stable gain 14.2 dB at 12 GHz
• 90 GHz fT SiGe technology

应用 Application

Ku band DBS Low-Noise blocks