NPN wideband silicon germanium RF transistor

NPN silicon germanium RF transistor for high speed, low noise applications in a plastic,4-pin dual-emitter SOT343F package.\nThe BFU910F is suitable for small signal applications up to 20 GHz. • Low noise high gain microwave transistor\n• Minimum noise figure (NFmin) = 0.65 dB at 12 GHz\n• Maximum stable gain 14.2 dB at 12 GHz\n• 90 GHz fT SiGe technology;

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NPN wideband silicon germanium RF transistor

文件：145.59 Kbytes 页数：11 Pages

PHI

PHI

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • Internal input matching to achieve high power gain

文件：95.77 Kbytes 页数：12 Pages

PHI

PHI

isc Silicon NPN Darlington Power Transistor

文件：105.46 Kbytes 页数：2 Pages

ISC

无锡固电

Desiccant sachets are used to absorb moisture from a given environment.

文件：263.55 Kbytes 页数：1 Pages

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