BFU580Q数据手册恩XP中文资料规格书

描述 Description

NPN silicon microwave transistor for high speed, medium power applications in a plastic,4-pin SOT223 package.
The BFU580G is part of the BFU5 family of transistors, suitable for small signal to mediumpower applications up to 2 GHz.

特性 Features

Low noise, high linearity, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NFmin) = 0.75 dB at 900 MHz
Maximum stable gain 15.5 dB at 900 MHz
11 GHz fT silicon technology

应用 Application

Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise, high linearity amplifiers for ISM applications
Automotive applications (e.g., antenna amplifiers)