BFU730LX数据手册恩XP中文资料规格书

描述 Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.

特性 Features

• Leadless ultra small plastic SMD package 1.0 mm x 0.6 mm x 0.34 mm
• Low noise high gain microwave transistor
• Noise figure (NF) = 0.75 dB at 6 GHz
• High maximum power gain (Gp(max)) of 15.8 dB at 6 GHz
• Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz:
• input third-order intercept point (IP3i) = 15 dBm
• input power at 1 dB gain compression (Pi(1dB)) = 0 dBm
• 110 GHz fT silicon germanium technology

应用 Application

Wi-Fi / WLAN
WiMAX
用于GPS、GLONASS、Galileo和Compass（北斗）的LNA
DBS（第2 LNA 级、混频器级、DRO）、SDARS
RKE、AMR / Zigbee
用于微波通信系统的LNA
配备低电流电池的应用
微波驱动器/缓冲器应用