RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN wideband silicon germanium RF transistor

文件：152.68 Kbytes 页数：13 Pages

PHI

PHI

NPN宽频带硅锗RF晶体管

NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package. • Leadless ultra small plastic SMD package 1.0 mm x 0.6 mm x 0.34 mm\n• Low noise high gain microwave transistor\n• Noise figure (NF) = 0.75 dB at 6 GHz\n• High maximum power gain (Gp(max)) of 15.8 dB at 6 GHz\n• Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz:• input third-order intercept poi;

恩XP

N-channel Enhancement Mode Power MOSFET

文件：509.5 Kbytes 页数：6 Pages

BELLING

上海贝岭

Bandpass Filter

文件：495.71 Kbytes 页数：1 Pages

MINI

Class 1 Bluetooth v2.0 Module

文件：353.26 Kbytes 页数：3 Pages

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