RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN 5 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is designed for use in RF amplifiers and oscillators in pagers and pocket phones with signal frequencies up to 2 GHz. FEATURES • Low current consumption • Low noise figure • Gold metallization ensures excellent reliability • SOT323

文件：126.55 Kbytes 页数：11 Pages

PHI

飞利浦

NPN 5 GHz wideband transistor

文件：106.73 Kbytes 页数：11 Pages

JMNIC

锦美电子

NPN 5 GHz wideband transistor

文件：106.73 Kbytes 页数：11 Pages

JMNIC

锦美电子

NPN 5 GHz wideband transistor

文件：259.8 Kbytes 页数：13 Pages

PHI

飞利浦

NPN 5 GHz宽频带晶体管

Not recommended for new design in, please use replacement BFU520W.\nNPN transistor in a plastic SOT323 envelope. It is designed for use in RF amplifiers and oscillators in pagers and pocket phones with signal frequencies up to 2 GHz. • Gold metallization ensures excellent reliability\n• Low current consumption\n• Low noise\n• Small package;

恩XP

恩智浦