JFET Amplifiers(N-Channel)

JFET Amplifiers N−Channel Features • Pb−Free Package is Available

文件：59.4 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：散装 类别：分立半导体产品 晶体管 - JFET 描述：JFET N-CH 225MW SOT23

ONSEMI

安森美半导体

SCHOTTKY BARRIER DIODE

● Features Extremely Low Forward Voltage 0.3 V (max) @ IF = 10 mA S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ● Construction Silicon epitaxial planar ● We declare that the material

文件：75.53 Kbytes 页数：2 Pages

LRC

乐山无线电

General Purpose Transistors

文件：255.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

SCHOTTKY BARRIER DIODE

● Features Extremely Low Forward Voltage 0.3 V (max) @ IF = 10 mA S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ● Construction Silicon epitaxial planar ● We declare that the material

文件：75.53 Kbytes 页数：2 Pages

LRC

乐山无线电