Silicon n-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low vol

文件：46.98 Kbytes 页数：7 Pages

PHI

PHI

Silicon n-channel dual gate MOS-FETs

恩XP

Silicon n-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low vol

文件：46.98 Kbytes 页数：7 Pages

PHI

PHI

Rubber Grommets

Description Rubber Grommet

文件：157.86 Kbytes 页数：1 Pages

MULTICOMP

易络盟

Inter = SBC 901

文件：408.37 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

MOTIX™ integrated full-bridge IC BTM9010/BTM9011

Features • Path resistance of typ. 175 mΩ at 25°C • Pulse current: - 5.2 A for tpulse ≤ 1 s at 85°C - 4.2 A for tpulse ≤ 10 s at 85°C • Supply voltage range from 7 V to 18 V • Extended supply voltage range from 4.5 V to 40 V • Current limitation of min. 10 A • Slew rate selection • Protec

文件：383.56 Kbytes 页数：7 Pages

INFINEON

英飞凌