Silicon n-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low vol

文件：46.98 Kbytes 页数：7 Pages

PHI

飞利浦

Inter = SBC 901

文件：408.37 Kbytes 页数：1 Pages

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MOTIX™ integrated full-bridge IC BTM9010/BTM9011

Features • Path resistance of typ. 175 mΩ at 25°C • Pulse current: - 5.2 A for tpulse ≤ 1 s at 85°C - 4.2 A for tpulse ≤ 10 s at 85°C • Supply voltage range from 7 V to 18 V • Extended supply voltage range from 4.5 V to 40 V • Current limitation of min. 10 A • Slew rate selection • Protec

文件：383.56 Kbytes 页数：7 Pages

Infineon

英飞凌

N-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS BUZ905 &

文件：43.03 Kbytes 页数：4 Pages

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