丝印：WMO；Package：SOT-343R；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

文件：155.83 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：WMO；Package：SOT-343R；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)

• Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998

文件：30.08 Kbytes 页数：2 Pages

SIEMENS

西门子

Silicon N-Channel MOSFET Tetrode

Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz

文件：249.05 Kbytes 页数：6 Pages

INFINEON

英飞凌

N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward

文件：94.6 Kbytes 页数：12 Pages

PHI

PHI