N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

文件：155.83 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

文件：155.83 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

文件：155.83 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司