N-channel dual-gate PoLo MOS-FETs

文件：129.289 Kbytes 页数：16 Pages

JMNIC

锦美电子

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：116.05 Kbytes 页数：16 Pages

PHI

PHI

Battery power unit

文件：123.15 Kbytes 页数：24 Pages

PHI

PHI

Battery power unit

文件：123.15 Kbytes 页数：24 Pages

PHI

PHI