Dual N-channel dual-gate MOS-FET

DESCRIPTION The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between

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飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

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Dual N-channel dual-gate MOS-FET

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Dual N-channel dual gate MOSFET

General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Autom

文件：201.19 Kbytes 页数：20 Pages

PHI

飞利浦

Dual N-channel dual-gate MOS-FET

文件：192.03 Kbytes 页数：21 Pages

JMNIC

锦美电子

Dual N-channel dual-gate MOS-FET

文件：192.03 Kbytes 页数：21 Pages

JMNIC

锦美电子

Dual N-channel dual gate MOSFET

文件：213.36 Kbytes 页数：17 Pages

JMNIC

锦美电子

Dual N-channel dual gate MOSFET

文件：213.36 Kbytes 页数：17 Pages

JMNIC

锦美电子

Dual N-channel dual gate MOSFET

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