Dual N-channel dual gate MOS-FET

DESCRIPTION The BF1204 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between t

文件：110.45 Kbytes 页数：12 Pages

PHI

飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Dual N-channel dual gate MOS-FET

DESCRIPTION\nThe BF1204 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the g • Two low noise gain controlled amplifiers in a single package\n• Superior cross-modulation performance during AGC\n• High forward transfer admittance\n• High forward transfer admittance to input capacitance ratio.;

恩XP

Dual N-channel dual gate MOS-FET

文件：116.52 Kbytes 页数：12 Pages

JMNIC

锦美电子

Dual N-channel dual gate MOS-FET

文件：116.52 Kbytes 页数：12 Pages

JMNIC

锦美电子

SAWs

120.00MHz IF SAW Filter, 12 pads, SM24

TGS

武汉泰晶

中频滤波器

SHOULDER

好达电子