Dual N-channel dual gate MOSFET

General description The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabi

文件：253.38 Kbytes 页数：22 Pages

PHI

飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Dual N-channel dual gate MOSFET

文件：262.25 Kbytes 页数：22 Pages

恩XP

Dual N-channel dual gate MOSFET

文件：262.25 Kbytes 页数：22 Pages

JMNIC

锦美电子

Dual N-channel dual gate MOSFET

文件：262.25 Kbytes 页数：22 Pages

JMNIC

锦美电子

Dual N-channel dual gate MOSFET

文件：262.25 Kbytes 页数：22 Pages

JMNIC

锦美电子

Dual N-channel dual gate MOSFET

恩XP

恩智浦