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BF1105R

N-channel dual-gate MOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF1105WR

N-channel dual-gate MOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF1107

N-channel single gate MOS-FETs

DESCRIPTION TheBF1107andBF1107Waredepletiontypefield-effecttransistorsinSOT23andSOT323packagesrespectively. ThelowlossandhighisolationcapabilitiesofthisMOS-FETprovideexcellentRFswitchingfunctions. Integrateddiodesbetweengateandsourceandbetweengateanddrainp

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF1107

N-Channel 60-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

BF1107W

N-channel single gate MOS-FETs

DESCRIPTION TheBF1107andBF1107Waredepletiontypefield-effecttransistorsinSOT23andSOT323packagesrespectively. ThelowlossandhighisolationcapabilitiesofthisMOS-FETprovideexcellentRFswitchingfunctions. Integrateddiodesbetweengateandsourceandbetweengateanddrainp

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF1108

Silicon RF switches

DESCRIPTION Theseswitchesareacombinationofadepletiontypefield-effecttransistorandabandswitchingdiodeinanSOT143B(BF1108)orSOT143R(BF1108R)package.ThelowlossandhighisolationcapabilitiesofthesedevicesprovideexcellentRFswitchingfunctions.ThegateoftheMOSFETca

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF1108R

Silicon RF switches

DESCRIPTION Theseswitchesareacombinationofadepletiontypefield-effecttransistorandabandswitchingdiodeinanSOT143B(BF1108)orSOT143R(BF1108R)package.ThelowlossandhighisolationcapabilitiesofthesedevicesprovideexcellentRFswitchingfunctions.ThegateoftheMOSFETca

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF1109

N-channel dual-gate MOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1109,BF1109RandBF1109WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF1109R

N-channel dual-gate MOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1109,BF1109RandBF1109WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF1109WR

N-channel dual-gate MOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1109,BF1109RandBF1109WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

技术参数

  • Frequency(MHz):

    2400~2500

  • InsertionLoss(dB/max.):

    1.3

供应商型号品牌批号封装库存备注价格
MOT/ST/PH
24+
CAN3
21322
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
PHI
23+
SOT363
12300
询价
恩XP
24+
原厂原封
1500
原装现货热卖
询价
恩XP
16+
NA
8800
诚信经营
询价
PHI
05+
原厂原装
21051
只做全新原装真实现货供应
询价
PHI
24+
SOT-343
2490
原装现货假一罚十
询价
恩XP
24+
SOT-343SOT-323-4
49200
新进库存/原装
询价
恩XP
23+
SOT-143
30000
原装正品,假一罚十
询价
INFION
2016+
SOT143
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
恩XP
24+
SOT143
5000
全现原装公司现货
询价
更多BF11供应商 更新时间2025-7-29 8:58:00