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BF11

Mounting flange

PFBeijiafu (Beijing) Process Automation Control Equipment Co., Ltd

倍加福倍加福(北京)过程自动化控制设备有限公司

BF1100

Dual-gate MOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF1100R

Dual-gate MOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF1100WR

Dual-gate MOS-FET

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Special

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF1101

N-channel dual-gate MOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1101,BF1101RandBF1101WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF1101R

N-channel dual-gate MOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1101,BF1101RandBF1101WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF1101WR

N-channel dual-gate MOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1101,BF1101RandBF1101WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF1101WR

N-channel dual-gate MOSFET; \n\n•High transfer admittance to input capacitance ratio\n\n•Integrated diodes between gates and source\n\n•Low noise\n\n•Source and substrate interconnected\n\n\n;

Overview Archived content is no longer updated and is made available for historical reference only.\nEnhancement type Field-Effect Transistor in a plastic SOT343R package.\n

NXPNXP Semiconductors

恩智浦恩智浦半导体公司

BF1102

Dual N-channel dual gate MOS-FET

DESCRIPTION TheBF1102andBF1102RarebothtwoequaldualgateMOS-FETswhichhaveasharedsourcepinandasharedgate2pin.Bothdeviceshaveinterconnectedsourceandsubstrate;aninternalbiascircuitenablesDCstabilizationandaverygoodcross-modulationperformanceat5Vsupplyvolt

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF1105

N-channel dual-gate MOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

技术参数

  • Frequency(MHz):

    2400~2500

  • InsertionLoss(dB/max.):

    1.3

供应商型号品牌批号封装库存备注价格
MOT/ST/PH
24+
CAN3
21322
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
PHI
23+
SOT363
12300
询价
恩XP
24+
原厂原封
1500
原装现货热卖
询价
恩XP
16+
NA
8800
诚信经营
询价
PHI
05+
原厂原装
21051
只做全新原装真实现货供应
询价
PHI
24+
SOT-343
2490
原装现货假一罚十
询价
恩XP
24+
SOT-343SOT-323-4
49200
新进库存/原装
询价
恩XP
23+
SOT-143
30000
原装正品,假一罚十
询价
INFION
2016+
SOT143
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
恩XP
24+
SOT143
5000
全现原装公司现货
询价
更多BF11供应商 更新时间2025-7-28 15:47:00