Power Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER

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Central

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 750(Min)@ IC= -3A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX86; -60V(Min)- BDX86A -80V(Min)- BDX86B; -100V(Min)- BDX86C • Complement to Type BDX85/A/B/C APPLICATIONS • Designed for use in power linear and switching applicati

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ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 750(Min)@ IC= -3A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX86; -60V(Min)- BDX86A -80V(Min)- BDX86B; -100V(Min)- BDX86C • Complement to Type BDX85/A/B/C APPLICATIONS • Designed for use in power linear and switching applicati

文件：135.06 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar PNP Device in a Hermetically sealed TO3

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SEME-LAB

Seme LAB

Bipolar Junction Transistors

TT Electronics