NPN SILICON TRANSISTORS, DIFFUSED MESA

• The BDY57 and BDY58 are mounted in TO-3 metal package. • LF Large Signal Power Amplification • High Current Fast Switching. • Compliance to RoHS.

文件：209.55 Kbytes 页数：3 Pages

COMSET

isc Silicon NPN Power Transistor

DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in low frequency large signal power amplifications

文件：76.96 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in low frequency large signal power amplifications

文件：130.52 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- :VCEo(sus)=125V(Min) • High Power Dissipation • Low Collector Saturation Voltage APPLICATIONS • LF signal power amplification. • High current fast switching

文件：76.42 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in low frequency large signal power amplifications

文件：119 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件：120.61 Kbytes 页数：3 Pages

SAVANTIC

SILICON TRANSISTORS, DIFFUSED MESA

文件：1.09321 Mbytes 页数：3 Pages

COMSET

NPN SILICON TRANSISTORS DIFFUSED MESA

文件：153.51 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

PRO-ELECTRON POWER TRANSISTORS

文件：353.49 Kbytes 页数：2 Pages

Solitron

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage APPLICATIONS ·LF signal power amplification. ·High current fast switching

文件：184.18 Kbytes 页数：2 Pages

ISC

无锡固电