Power Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER

文件：53.7 Kbytes 页数：1 Pages

Central

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 750(Min)@ IC= 6A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min)- BDX87B; 100V(Min)- BDX87C • Complement to Type BDX88/A/B/C APPLICATIONS • Designed for use in power linear and switching applications.

文件：230.67 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 750(Min)@ IC= 6A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min)- BDX87B; 100V(Min)- BDX87C • Complement to Type BDX88/A/B/C APPLICATIONS • Designed for use in power linear and switching applications.

文件：135.74 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件：11.29 Kbytes 页数：1 Pages

SEME-LAB

Bipolar Junction Transistors

TT Electronics