Silicon NPN Power Transistors

DESCRIPTION • High DC Current Gain- : hFE= 1000(Min)@ IC= 10A • Low Saturation Voltage • Complement to Type BDX66/A/B/C APPLICATIONS • Designed for audio output stages and general amplifier and switching applications

文件：129.82 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 1000(Min)@ IC= 10A • Low Saturation Voltage • Complement to Type BDX66/A/B/C APPLICATIONS • Designed for audio output stages and general amplifier and switching applications

文件：142.34 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON DARLINGTONS

NPN SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications.

文件：145.28 Kbytes 页数：4 Pages

COMSET

NPN SILICON DARLINGTON POWER TRANSISTOR

文件：83.95 Kbytes 页数：4 Pages

COMSET

NPN SILICON DARLINGTONS

文件：221.42 Kbytes 页数：5 Pages

COMSET

Silicon NPN Power Transistors

文件：109.51 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件：111.09 Kbytes 页数：3 Pages

SAVANTIC

NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR

文件：24.06 Kbytes 页数：2 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed TO3

文件：15.53 Kbytes 页数：1 Pages

SEME-LAB

Bipolar Junction Transistors

TT Electronics